speculation from a former analog IC designer...
The Foveon technique, I bet, has sparked interest in the image sensor research
community, simply because it reduces the bayer color mask loss. Foveon has yet
to prove comparable performance with CMOS sensor, hence Foveon has not become
mainstream in sensors. The efficiency of CMOS sensors (with bayer color mask)
has kept it ahead of the more bipolar based Foveon sensor.
Foveon sensors use wavelength propagation depth into semiconductor junction
depth to separate colors. This is a very bipolar approach, but what if you
could devise a CMOS version? You might get closer to the efficiencies of CMOS
senors? This patent looks to be a step in that direction.
Wayne - purely speculating
At 2/4/2011 05:57 PM, Mike wrote:
>http://www.sonyalpharumors.com/one-more-foveon-like-sony-patent/
>
>Not sure what to make of this, but looks promising.
>Bigger bucks behind R&D--perhaps will yield fruit.
>
>New things, I think, are organic green conversion layer though the R
>and B are in silicon like the previous Foveon.
>
>Looks back illuminated? We'll see how it is implemented.
>
>Mike
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